50N06FI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
50N06FI
DESCRIPTION
·Drain Current ID=27A@ TC=25℃
·Drain Source Voltage-
: VDSS=60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 28mΩ(Max)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies
·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
27
ID
A
Drain Current-continuous@ TC=100℃
19
Ptot
Total Dissipation@TC=25℃
45
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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