4N70_17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
4N70
·FEATURES
·Low RDS(on) = 2.5Ω(MAX)
·Improved Gate Charge
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching mode power supplies
·DC-DC & DC-AC converter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
700
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
4
A
IDM
Drain Current-Single Plused
16
A
Ptot
Total Dissipation@TC=25℃
36
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
40 ℃/W
isc website：www.iscsemi.com
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