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| 4N35 Datasheet, PDF (1/2 Pages) Motorola, Inc – STANDARD THRU HOLE CASE 730A-04 | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N35
DESCRIPTION
·Drain Current ID= 4A@ TC=25â
·Drain Source Voltage-
: VDSS= 350V(Min)
·Fast Switching Speed
APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
350
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
4
A
ID(puls)
Pulse Drain Current
16
A
Ptot
Total Dissipation@TC=25â
75
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3
â/W
62.5 â/W
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