40N20 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
40N20
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Power switching applications
·Hard switched and high frequency circuits
·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Plused
160
A
PD
Total Dissipation @TC=25℃
220
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.47 ℃/W
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