3N50-220 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N50
·FEATURES
·Drain Current ID= 3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 3.0Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
3
A
IDM
Drain Current-Single Plused
5
A
PD
Total Dissipation @TC=25℃
60
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.67 ℃/W
isc website：www.iscsemi.com
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