3DD8F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD8F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 200V(Min)
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= 2V(Max) @I_C= 5A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=75℃
TJ
Junction Temperature
15
A
100
W
175
℃
T_stg
Storage Temperature Range
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} ^{Thermal Resistance,Junction to Case}
MAX UNIT
1.0 ℃/W
isc website：www.iscsemi.cn
1