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| 3DD7E Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS
·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
250
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=75â
TJ
Junction Temperature
7.5
A
75
W
175
â
Tstg
Storage Temperature Range
-55~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.33 â/W
isc websiteï¼www.iscsemi.cn
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