3DD7D Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
3DD7D
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·power amplifier
·Low-speed switching
·Power regulator
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
·
Fig.1 simplified outline (TO-3) and symbol
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
P_C
Collector power dissipation
T_C=75℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
250
200
5
7.5
75
-55~175
-55~175
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
MAX
1.33
UNIT
℃/W