3DD303C Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD303C
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 100V(Min)
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= 1.5V(Max) @I_C= 3A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
250
V
V_CEO
Collector-Emitter Voltage
100
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@ T_C=75℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3
A
30
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} ^{Thermal Resistance,Junction to Case}
MAX UNIT
2.5 ℃/W
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