3DD207I Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD207i
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 3A
APPLICATIONS
·Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=75℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
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