3DD200 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
3DD200
DESCRIPTION
With TO-3 package
High collector-base breakdown voltage
: V_CBO=250V
APPLICATIONS
For TV horizontal output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=75
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rjc
Thermal resistance junction to case
VALUE
250
100
6
3
30
150
-55~150
UNIT
V
V
V
A
W
MAX
1.5
UNIT
/W