33N10 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
33N10
·FEATURES
·Drain Current I_D= 33A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 100V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.06Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±30
V
I_D
Drain Current-Continuous
33
A
I_DM
Drain Current-Single Plused
132
A
P_D
Total Dissipation @T_C=25℃
150
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.0 ℃/W
62.5 ℃/W
isc website：www.iscsemi.cn
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