2STD1665 Datasheet, PDF (1/2 Pages) STMicroelectronics – Low voltage fast-switching NPN power transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2STD1665
DESCRIPTION
·Low collector saturation voltage
·High current gain characteristics
·Fast-switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Voltage regulators
·High efficiency low voltage switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Peak Current
PC
Collector Power Dissipation
TJ
Junction Temperature
20
A
15
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}