2SK956_17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK956
DESCRIPTION
·Drain Current –ID=9A@ TC=25℃
·Drain Source Voltage-
: VDSS=800V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
9
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
80
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}