2SK906 Datasheet, PDF (1/2 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK906
DESCRIPTION
·Drain Current –I_D=32A@ T_C=25℃
·Drain Source Voltage-
: V_DSS=100V(Min)
APPLICATIONS
·Designed especially for low voltage.
·high speed applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
32
A
Total Dissipation@TC=25℃
125
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
1.0
℃/W
R_{th j-a} Thermal Resistance,Junction to Ambient
35
℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
PDF pdfFactory Pro
www.fineprint.cn