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2SK904 Datasheet, PDF (1/2 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOS-FET
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK904
DESCRIPTION
·Drain Current –ID=3A@ TC=25℃
·Drain Source Voltage-
: VDSS=800V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
800
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
3
A
Total Dissipation@TC=25℃
150
W
Max. Operating Junction Temperature
80
℃
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
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