2SK899 Datasheet, PDF (1/2 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOS-FET

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK899
DESCRIPTION
·Drain Current –ID=18A@ TC=25℃
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
18
A
ID(puls)
Pulsed Drain Current
72
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.0
35
UNIT
℃/W
℃/W
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