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2SK643 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – 2SK643 | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK643
DESCRIPTION
·Drain Current âID=10A@ TC=25â
·Drain Source Voltage-
: VDSS=450V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
450
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25â
10
A
Ptot
Total Dissipation@TC=25â
125
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
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