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2SK635 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID=3A@ TC=25C | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES
·Drain Current âID=3A@ TC=25â
·Drain Source Voltage-
: VDSS= 500V(Min)
isc Product Specification
2SK635
DESCRIPTION
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25â
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
500
V
±20
V
3
A
40
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.25
62.5
UNIT
â/W
â/W
isc websiteï¼www.iscsemi.cn
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