2SK629 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Drain Source Voltage-: VDSS= 100V(Min)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
FEATURES
·Drain Current –I_D=20A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 100V(Min)
isc Product Specification
2SK629
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE UNIT
100
V
±20
V
20
A
80
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.25
62.5
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
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