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2SK539 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – 2SK539 | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK539
DESCRIPTION
·Drain Current âID=5A@ TC=25â
·Drain Source Voltage-
: VDSS=900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
900
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25â
5
A
Total Dissipation@TC=25â
150
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.cn
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