2SK3878 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator Applications

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK3878
FEATURES
·Drain Current –ID= 9A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.3Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for a load switch or in PWM applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
9
A
IDM
Drain Current-Single Plused
27
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.833 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
50
℃/W
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