2SK383 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK383
DESCRIPTION
·Drain Current –I_D= 10A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 100V(Min)
·Fast Switching Speed
APPLICATIONS
·High speed power Switching.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
PD
Tj
Tstg
Drain-Source Voltage (VGS=0)
100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
10
A
Power Dissipation@TC=25℃
50
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
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