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| 2SK357 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK357
DESCRIPTION
·Drain Current âID= 5A@ TC=25â
·Drain Source Voltage-
: VDSS= 150V(Min)
·Fast Switching Speed
APPLICATIONS
·High speed power switching applications.
·High Drain Current.
·High forward transfer admittance
·Low leakage Current.
·Low Drain-Source on resistance
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
150
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25â
5
A
Total Dissipation@TC=25â
40
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
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