2SK2996 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2996
DESCRIPTION
·Drain Current I_D= 10A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching Regulators
·DC-DC Converter,
·Motor Control
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
Drain-Source Voltage (V_GS=0)
600
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ TC=25℃
10
A
I_D(puls)
Pulsed Drain Current
30
A
P_tot
Total Dissipation@T_C=25℃
45
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
·
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.87 ℃/W
62.5 ℃/W
isc website：www.iscsemi.cn
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