 English |
|
|
|
|
|
|
|
| 2SK1667 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
| |||
|
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1667
DESCRIPTION
·Drain Current âID= 7A@ TC=25â
·Drain Source Voltage-
: VDSS= 250V(Min)
·Fast Switching Speed
APPLICATIONS
·low onâresistance
·High speed switching
·Low drive current
·No secondary breakdown
·Suitable for switchingregulator, DCâDC convertor
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
250
V
±30
V
Drain Current-continuous@ TC=25â
7
A
Total Dissipation@TC=25â
50
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese