2SK1600 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1600
DESCRIPTION
·Drain Current –I_D= 3A@ T_C=25℃
·Drain Source Voltage-
: V_DSS=800V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
800
V
±30
V
Drain Current-continuous@ TC=25℃
3
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
83.3
℃/W
℃/W
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