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2SK1515 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
ESCRIPTION
·Drain Current âID=10A@ TC=25â
·Drain Source Voltage-
: VDSS=450 (Min)
isc Product Specification
2SK1515
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL PARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
ID
Drain Current-continuous@ TC=25â
Ptot
Total Dissipation@TC=25â
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNI
T
450
V
±30
V
10
A
100
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.0 â/W
Thermal Resistance,Junction to Ambient 50 â/W
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