2SK1466 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Very High-Speed Switching Applications

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK1466
DESCRIPTION
·Drain Current –ID=16A@ TC=25℃
·Drain Source Voltage-
: VDSS=900 (Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI
T
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
16
A
Ptot
Total Dissipation@TC=25℃
250
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.25 ℃/W
Rth j-a
Thermal Resistance,Junction to Ambient 35.0 ℃/W
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