2SK1341 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1341
DESCRIPTION
·Drain Current –I_D= 6A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE
UNIT
V_DSS Drain-Source Voltage (V_GS=0)
900
V
V_GS
Gate-Source Voltage
±30
V
I_D
Drain Current-continuous@ TC=25℃
6
A
P_tot
Total Dissipation@TC=25℃
100
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
0.83 ℃/W
Thermal Resistance,Junction to Ambient 35 ℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
PDF pdfFactory Pro
www.fineprint.cn