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2SK1341 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1341
DESCRIPTION
·Drain Current âID= 6A@ TC=25â
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
6
A
Ptot
Total Dissipation@TC=25â
100
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.83 â/W
Thermal Resistance,Junction to Ambient 35 â/W
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