2SK1052 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Very High-Speed Switching Applications

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1052
DESCRIPTION
·Drain Current –I_D=0.5A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 450V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
450
V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25℃
0.5
A
Total Dissipation@TC=25℃
30
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
1.75
Thermal Resistance,Junction to Ambient 30
℃/W
℃/W
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