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2SK1019 Datasheet, PDF (1/2 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current âID=35A@ TC=25â
·Drain Source Voltage-
: VDSS=450V(Min)
APPLICATIONS
·high voltage, high speed power switching
isc Product Specification
2SK1019
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
450
V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25â
35
A
Total Dissipation@TC=25â
300
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.416 â/W
Thermal Resistance,Junction to Ambient
â/W
isc websiteï¼www.iscsemi.cn
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