2SK1019 Datasheet, PDF (1/2 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current –I_D=35A@ T_C=25℃
·Drain Source Voltage-
: V_DSS=450V(Min)
APPLICATIONS
·high voltage, high speed power switching
isc Product Specification
2SK1019
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
450
V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25℃
35
A
Total Dissipation@TC=25℃
300
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
0.416 ℃/W
Thermal Resistance,Junction to Ambient
℃/W
isc website：www.iscsemi.cn
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