2SJ221 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
DESCRIPTION
·Low On Resistance
·High Speed Switching
·Low Drive Current
isc Product Specification
2SJ221
APPLICATIONS
·High speed switching application
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
-100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
-20
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
R_{th j-a} Thermal Resistance,Junction to Ambient
3.1 ℃/W
75 ℃/W
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