2SJ126 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Low Drain-Source ON Resistance

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2SJ126
DESCRIPTION
·Low Drain-Source ON Resistance
·High Forward Transfer Admittance
·Low Leakage Current
·Enhancement-Mode
APPLICATIONS
·High speed switching application
·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
-60
V
±20
V
ID
Drain Current-continuous@ TC=37℃
-10
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
R_{th j-a} Thermal Resistance,Junction to Ambient
3.1 ℃/W
75 ℃/W
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