2SD993 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD993
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= 10V(Max.)@ I_C= 2.5A
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
600
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current- Continuous
3
A
I_CP
Collector Current- Peak
Collector Power Dissipation
P_C
@ T_C= 25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
50
W
150
℃
-40~150
℃
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