2SD985 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON DARLINGTON POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD985 2SD986
DESCRIPTION
With TO-126 package
Complement to type 2SB794/795
DARLINGTON
High DC current gain
Low collector saturation voltage
APPLICATIONS
For low frequency power amplifier
and power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
Collector-base voltage
Open emitter
Collector-emitter voltage
2SD985
2SD986
Open base
V_EBO
Emitter -base voltage
Open collector
I_C
Collector current
I_CM
Collector current-Peak
I_B
Base current
P_T
Total power dissipation
T_a=25
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
150
60
80
8
1.5
3.0
0.15
1.0
10
150
-55~150
UNIT
V
V
V
A
A
A
W