2SD972 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD972
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 50V(Min)
·High DC Current Gain
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
50
V
V_CEO Collector-Emitter Voltage
50
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
4
A
I_CP
Collector Current-Peak
6
A
I_B
Base Current
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
0.2
A
30
W
150
℃
-55~150 ℃
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