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2SD971 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD971
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 300V(Min)
·High DC Current Gain
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for applications such as electronic ignition, DC
and AC motor controls, solenoid drivers,etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICP
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
50
W
150
℃
-55~150 ℃
isc website:www.iscsemi.com
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