2SD970 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD970
DESCRIPTION
With TO-220 package
High DC current gain
DARLINGTON
Complement to type 2SB791
APPLICATIONS
For medium speed and power
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
120
120
7
8
12
40
150
-55~150
UNIT
V
V
V
A
A
W