2SD962 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD962
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 200V(Min)
·High DC Current Gain
·High Reliability
·Good Linearity of h_FE
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for series regulators ,color TV, power supplies and
similar devices applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
200
V
V_CEO Collector-Emitter Voltage
200
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
5
A
I_CP
Collector Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
8
A
80
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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