2SD956 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD956
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·Low Collector Saturation Voltage-
: V_CE(sat)= 4.0V(Max.)@ I_C= 2A
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
1500
V
V_CES Collector-Emitter Voltage
1500
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
2.5
A
I_CP
Collector Current- Peak
P_C
Collector Power Dissipation
@ T_C= 25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4.5
A
50
W
150
℃
-65~150 ℃
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