2SD935 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD935
DESCRIPTION
·With TO-3 Package
·Low collector saturation voltage
·Good Linearity of h_FE
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for color TV horizontal deflection driver and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
250
V
V_CEO Collector-Emitter Voltage
250
V
V_EBO
I_C
Emitter-Base Voltage
Collector Current-Continuous
7
V
5
A
I_CM
Collector Current-Pulse
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
10
A
60
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
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