2SD929 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD929
DESCRIPTION
·High DC Current Gain
: h_FE= 700(Min.)@ I_C= 1A, V_CE= 4V
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 180V(Min)
·High Reliability
·Good Linearity of h_FE
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color & B/W TV power supply
·Active power filter
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
200
V
V_CEO Collector-Emitter Voltage
180
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
5
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
0.5
A
80
W
150
℃
-55~150 ℃
isc website：www.iscsemi.com
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