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2SD916 Datasheet, PDF (1/2 Pages) Fuji Electric – POWER DARLINGTON | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD916
DESCRIPTION
·High DC Current Gain
·Low Saturation Voltage
·High Reliability
APPLICATIONS
·Audio power amplifiers
·Relay& solenoid drivers
·Motor controls
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VCEO(SUS) Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
30
W
150
â
-55~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.0 â/W
isc Websiteï¼www.iscsemi.cn
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