2SD911 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD911
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 80V(Min)
·High Current Capability
·Good Linearity of h_FE
·High Reliability
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio amplifier
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
150
V
V_CEO Collector-Emitter Voltage
80
V
V_EBO Emitter-Base voltage
7
V
I_C
Collector Current-Continuous
15
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3
A
100
W
150
℃
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}