2SD900 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD900
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: V_CE(sat)= 5.0V(Max.)@ I_C= 4.5A
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES Collector- Emitter Voltage
1500
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current- Continuous
5
A
I_CM
Collector Current- Peak
Collector Power Dissipation
P_C
@ T_C= 25℃
T_J
Junction Temperature
6
A
50
W
150
℃
T_stg
Storage Temperature Range
-45~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}