2SD897 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD897
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: V_CE(sat)= 5.0V(Max.)@ I_C= 1A
·Built-in Damper Diode
APPLICATIONS
·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
600
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current- Continuous
1.5
A
I_CM
Collector Current- Peak
5.0
A
I_BB
Base Current- Continuous
Collector Power Dissipation
P_C
@ T_C= 25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.8
A
50
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
2.5 ℃/W
isc Website：www.iscsemi.cn