2SD884 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD884
DESCRIPTION
·
·With TO-220C package
·High voltage;high speed
·Large P_C
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATNIGS(T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CP
Collector current-Peak
I_CP
Collector current-Peak
P_T
Total power dissipation
nonrepetitive
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
330
200
6
7
10
15
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃