2SD879 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 1.5V, 3V Strobe Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current-I_C= 3.0A
·Low Saturation Voltage -
: V_CE(sat)= 0.4V(Max)@ I_C= 3.0A, I_B= 60mA（Pulse）
·Excellent Linearity of h_FE in The Region From Low
Current to High Current.
APPLICATIONS
·In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
10
V
V_CEX
Collector-Emitter Voltage
20
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
3.0
A
I_CP
Collector Current-Pulse
5.0
A
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature Range
1.0
W
150
℃
-55~150 ℃
isc Product Specification
2SD879
isc website：www.iscsemi.cn
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