2SD878 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH POWER AMPLIFIER APPLICATIONS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD878
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 60V (Min)
·High Power Dissipation
·High Current Capability
APPLICATIONS
·High power amplifier applications.
·High power switching applications.
·DC-DC converter applications.
·Regulator applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
60
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
15
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
7
A
115
W
175
℃
-65~175 ℃
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